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SQS401EN
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
30
24
V GS = 10 V thru 5 V
30
24
1 8
12
V GS = 4 V
1 8
12
T C = 25 °C
6
V GS = 3 V
6
T C = 125 °C
0
0
T C = - 55 °C
0
1
2 3 4 5
6
0
1
2
3
4
5
30
V DS - Drain-to-Source V oltage ( V )
Output Characteristics
0.10
V GS - Gate-to-Source V oltage ( V )
Transfer Characteristics
24
1 8
12
T C = 25 °C
T C = - 55 °C
0.0 8
0.06
0.04
V GS = 4.5 V
T C = 125 °C
V GS = 10 V
6
0
0.02
0.00
0
4
8
12
16
20
0
6
12
1 8
24
30
2500
2000
I D - Drain Current (A)
Transconductance
C iss
6
5
4
I D - Drain Current (A)
On-Resistance vs. Drain Current
V D S = 20 V
I D = 9.3 A
1500
3
1000
2
C oss
500
0
C rss
1
0
0
10 20 30
40
0
5
10
15
20
25
V DS - Drain-to-Source V oltage ( V )
Capacitance
Q g - Total Gate Charge (nC)
Gate Charge
S11-2129 Rev. C, 31-Oct-11
3
Document Number: 65529
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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